ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,490, issued on Jan. 27, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Confined charge trap layer" was invented by Chang Seok Kang (Santa Clara, Calif.), Tomohiko Kitajima (San Jose, Calif.) and Mihaela A. Balseanu (Sunnyvale, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described is selective deposition of a silicon nitride (SiN) trap layer to form a memory device. A sacrificial layer is used for selective deposition in order to permit selective trap deposition. The trap layer is formed by deposition of a mold including a sacrificial layer, memory hole (MH) patterning, sacrificial layer recess from MH side, forming a deposi...