US Patent Issued to Applied Materials on Jan. 20 for "Method of forming a 4F2 DRAM including buried bitline" (New York Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,450, issued on Jan. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method of forming a 4F2 DRAM including buried bitline" was invented by Qintao Zhang (Mt Kisco, N.Y.) and Sipeng Gu (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are approaches for forming 4F2 vertical DRAM devices including buried bitlines. One DRAM device may include a plurality of bitlines between a plurality of vertical structures extending from a substrate, and a bottom source/drain formed in each of the plurality of vertical structures in a saddle area, wherein the saddle area comprises a saddle trench formed through the plurali...