US Patent Issued to Applied Materials on Jan. 20 for "DRAM transistor including horizonal body contact" (New York Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,451, issued on Jan. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"DRAM transistor including horizonal body contact" was invented by Sipeng Gu (Clifton Park, N.Y.) and Qintao Zhang (Mt. Kisco, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are approaches for forming a dynamic random-access memory device (DRAM). One DRAM device may include plurality of pillars extending from a base layer, and a spacer layer formed along just a lower portion of each of the plurality of pillars. The DRAM further includes a body contact and a cap between the plurality of pillars, wherein the body contact is formed over the space...