ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,447, issued on Jan. 13, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Systems and methods for depositing low-k dielectric films" was invented by Bo Xie (San Jose, Calif.), Kang S. Yim (Palo Alto, Calif.), Yijun Liu (Santa Clara, Calif.), Li-Qun Xia (Cupertino, Calif.) and Ruitong Xiong (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor proces...