US Patent Issued to Applied Materials on Jan. 13 for "Reduced strain Si/SiGe heteroepitaxy stacks for 3D DRAM" (Arizona, California Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,971, issued on Jan. 13, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Reduced strain Si/SiGe heteroepitaxy stacks for 3D DRAM" was invented by John Byron Tolle (Gilbert, Ariz.), Tomohiko Kitajima (San Jose, Calif.), Thomas John Kirschenheiter (Tempe, Ariz.), Patricia M. Liu (Saratoga, Calif.), Zuoming Zhu (Santa Clara, Calif.), Joe Margetis (Gilbert, Ariz.), Fredrick David Fishburn (Aptos, Calif.), Abdul Wahab Mohammed (Santa Clara, Calif.) and Gill Yong Lee (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional dynamic random-access memory (3D DRAM) structures and methods of formation of same are provide...