US Patent Issued to Applied Materials on Feb. 4 for "Localized stress modulation by implant to back of wafer" (Massachusetts, California, New Hampshire Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,974, issued on Feb. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Localized stress modulation by implant to back of wafer" was invented by Sony Varghese (Manchester, Mass.), Pradeep Subrahmanyan (Cupertino, Calif.), Dennis Rodier (Francestown, N.H.) and Kyuha Shim (Andover, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, ...