US Patent Issued to Applied Materials on Feb. 3 for "Methods of forming memory device with reduced resistivity" (California Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,521, issued on Feb. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods of forming memory device with reduced resistivity" was invented by Qixin Shen (Sunnyvale, Calif.), Chuanxi Yang (Los Altos, Calif.), Hang Yu (San Jose, Calif.), Deenesh Padhi (Sunnyvale, Calif.), Gill Yong Lee (San Jose, Calif.), Sung-Kwan Kang (San Jose, Calif.), Abdul Wahab Mohammed (Santa Clara, Calif.) and Hailing Liu (Union City, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices and methods of forming memory devices are described. The memory devices comprise a silicon nitride hard mask layer on a ruthenium layer. Forming the silicon n...