US Patent Issued to Applied Materials on Feb. 3 for "Method of dielectric material fill and treatment" (California Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,547, issued on Feb. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method of dielectric material fill and treatment" was invented by Shi You (San Jose, Calif.), He Ren (San Jose, Calif.), Naomi Yoshida (Sunnyvale, Calif.), Nikolaos Bekiaris (Campbell, Calif.), Mehul Naik (San Jose, Calif.), Martin Jay Seamons (San Jose, Calif.), Jingmei Liang (Santa Clara, Calif.) and Mei-Yee Shek (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD depo...