US Patent Issued to Applied Materials on Feb. 18 for "MOSFET gate engineerinng with dipole films" (Chinese, American Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,688, issued on Feb. 18, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"MOSFET gate engineerinng with dipole films" was invented by Yong Yang (Tengzhou, China), Srinivas Gandikota (Santa Clara, Calif.), Steven C. H. Hung (Sunnyvale, Calif.), Mandyam Sriram (San Jose, Calif.), Jacqueline S. Wrench (San Jose, Calif.) and Yixiong Yang (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-Kappa metal oxide layer on the interfacial layer, the high-Kappa metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipo...