ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,574, issued on Feb. 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Treatment methods for silicon nanosheet surfaces using hydrogen radicals" was invented by Pradeep Sampath Kumar (San Jose, Calif.), Norman L. Tam (Cupertino, Calif.), Shashank Sharma (Fremont, Calif.), Zhiming Jiang (Pleasonton, Calif.), Jingmin Leng (Fremont, Calif.), Victor Calderon (Sunnyvale, Calif.) and Mahesh Ramakrishna (Bengaluru, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon....