ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,436, issued on Feb. 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Substrate processing for GaN growth" was invented by Michel Khoury (Mountain View, Calif.) and Ria Someshwar (Mountain View, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary semiconductor structures may include a silicon-containing substrate. The structures may include a layer of a metal nitride overlying the silicon-containing substrate. The structures may include a gallium nitride structure overlying the layer of the metal nitride. The structures may include an oxygen-containing layer disposed between the layer of the metal nitride and the gallium...