ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,647, issued on Feb. 10, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Electrode tuning, depositing, and etching methods" was invented by Lei Liao (San Jose, Calif.), Yung-chen Lin (Gardena, Calif.), Chi-I Lang (Cupertino, Calif.) and Ho-yung David Hwang (Cupertino, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming features over a semiconductor substrate is provided. The method includes supplying a gas mixture over a surface of a substrate at a continuous flow rate. A first radio frequency (RF) signal is delivered to an electrode while the gas mixture is supplied at the continuous flow rate to deposit a polyme...