ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,416, issued on Feb. 10, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).
"Contact formation process for CMOS devices" was invented by Nicolas Louis Breil (San Jose, Calif.), Lisa Mcgill (Hillsboro, Ore.), Amritha Rammohan (Santa Clara, Calif.) and Shashank Sharma (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a mask on a semiconductor structure, the semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first se...