ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,509,762, issued on Dec. 30, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).
"Oxidation barriers with CVD soak processes" was invented by Nicolas Louis Breil (San Jose, Calif.), Yi-Chiau Huang (Fremont, Calif.) and Jesus Avila Avendano (Dallas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an oxidation barrier layer in a semiconductor structure includes forming a contact layer on an exposed surface of a semiconductor region of a semiconductor structure in a first processing chamber, wherein the semiconductor region comprises silicon germanium doped with p-type dopants and the contact layer comprises silicon germanium (Si...