US Patent Issued to APPLIED MATERIALS on Dec. 2 for "Method of metal oxide infiltration into photoresist" (California Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,486,559, issued on Dec. 2, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Method of metal oxide infiltration into photoresist" was invented by Nancy Fung (Livermore, Calif.) and Mark J. Saly (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a method for forming metal-oxides in the photoresist to improve profile control. The method includes infiltrating a metal oxide in a photoresist layer by pressurizing a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer, the photoresist layer being disposed on top of and in contact with an un...