ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,088, issued on Aug. 5, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Method for precision oxidation control by ion implantation" was invented by Supakit Charnvanichborikarn (Gloucester, Mass.), Cao-Minh Vincent Lu (Grenoble, France), Ana Cristina Gomez Herrero (Grenoble, France), Hans-Joachim Ludwig Gossmann (Summit, N.J.), Wei Zou (Lexington, Mass.) and Andrew Michael Waite (Beverly, Mass.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed...