US Patent Issued to Applied Materials on Aug. 26 for "Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy" (California Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,535, issued on Aug. 26, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy" was invented by Lin Xue (San Diego), Chi Hong Ching (Santa Clara, Calif.), Xiaodong Wang (San Jose, Calif.), Mahendra Pakala (Santa Clara, Calif.) and Rongjun Wang (Dublin, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film s...