US Patent Issued to Applied Materials on Aug. 26 for "Gate all around device with fully-depleted silicon-on-insulator" (California Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,351, issued on Aug. 26, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Gate all around device with fully-depleted silicon-on-insulator" was invented by Ashish Pal (San Ramon, Calif.), El Mehdi Bazizi (San Jose, Calif.), Benjamin Colombeau (San Jose, Calif.) and Myungsun Kim (Pleasanton, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Horizontal gate-all-around devices and methods of manufacturing are described. The hGAA devices include a fully-depleted silicon-on-insulator (FD-SOI) under the channel layers in the same footprint as the hGAA. The buried dielectric insulating layer of the FD-SOI includes one or more of silicon oxi...