US Patent Issued to Applied Materials on Aug. 19 for "Selective etching of silicon-and-germanium-containing materials with increased surface purities" (California Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,631, issued on Aug. 19, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Selective etching of silicon-and-germanium-containing materials with increased surface purities" was invented by Jiayin Huang (Fremont, Calif.), Zihui Li (Santa Clara, Calif.), Yi Jin (San Mateo, Calif.), Anchuan Wang (San Jose, Calif.) and Nitin K. Ingle (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A first layer of silicon-and-german...