US Patent Issued to Applied Materials on Aug. 12 for "Modifying patterned features using a directional etch" (Massachusetts Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,942, issued on Aug. 12, was assigned to Applied Materials Inc..

"Modifying patterned features using a directional etch" was invented by Tassie Andersen (Salem, Mass.) and Shurong Liang (Lynnfield, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are approaches for modifying patterned features using a directional etch. In one approach, a method may include providing a stack of layers of a semiconductor device, forming an opening through the stack of layers, the opening defined by a first sidewall and a second sidewall, and delivering ions into the first sidewall in a reactive ion etching process. The ions maybe delivered at a fir...