US Patent Issued to Applied Materials on Aug. 12 for "In-situ epi growth rate control of crystal thickness micro-balancing sensor" (California Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,385,159, issued on Aug. 12, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"In-situ epi growth rate control of crystal thickness micro-balancing sensor" was invented by Zhepeng Cong (San Jose, Calif.), Zhiyuan Ye (San Jose, Calif.), Avinash Ishwar Shervegar (San Jose, Calif.), Enle Choo (Saratoga, Calif.) and Ala Moradian (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors...