US Patent Issued to Applied Materials on April 8 for "EPI self-heating sensor tube as in-situ growth rate sensor" (California Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,270,752, issued on April 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"EPI self-heating sensor tube as in-situ growth rate sensor" was invented by Zhepeng Cong (San Jose, Calif.), Tao Sheng (Santa Clara, Calif.) and Ashur J. Atanos (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for determining a growth rate on a semiconductor substrate is described herein. The apparatus is an optical sensor, such as an optical growth rate sensor. The optical sensor is positioned in an exhaust of a deposition chamber. The optical sensor is self-heated using one or more internal heating elements, such as a resis...