ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,803, issued on April 22, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).
"System and methods for dram contact formation" was invented by Nicolas Louis Breil (San Jose, Calif.), Fredrick Fishburn (Aptos, Calif.) and Byeong Chan Lee (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to dynamic random access memory (DRAM) devices and to semiconductor fabrication for DRAM devices. Certain embodiments disclosed herein provide an integrated processing system and methods for forming CMOS contact, DRAM array bit line contact (BLC), and storage node structures. The integrated processing syst...