US Patent Issued to Applied Materials on April 15 for "Bias voltage modulation approach for SiO/SiN layer alternating etch process" (California Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,110, issued on April 15, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Bias voltage modulation approach for SiO/SiN layer alternating etch process" was invented by Sean Kang (Santa Clara, Calif.), Olivier Luere (Sunnyvale, Calif.), Kenji Takeshita (Santa Clara, Calif.), Sanghyuk Choi (Palo Alto, Calif.), Mengnan Zou (Sunnyvale, Calif.) and Zihao Ding (Fremond, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pa...