US Patent Issued to Applied Materials Israel on Nov. 25 for "Z-profiling of wafers based on X-ray measurements" (Israeli Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,898, issued on Nov. 25, was assigned to Applied Materials Israel Ltd. (Rehovot, Israel).

"Z-profiling of wafers based on X-ray measurements" was invented by Doron Girmonsky (Raanana, Israel), Michal Eilon (Beit-Elazari, Israel), Dror Shemesh (Hod Hasharon, Israel) and Uri Hadar (Tel-Aviv, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that li...