US Patent Issued to Applied Materials Israel on March 18 for "Reducing backscattered electron induced errors" (Israeli Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,602, issued on March 18, was assigned to Applied Materials Israel Ltd. (Rehovot, Israel).

"Reducing backscattered electron induced errors" was invented by Lior Akerman (Rehovot, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for improving a quality of a secondary electron image of a region of a sample, the method may include obtaining a backscattered electron (BSE) image of the region and a secondary electron (SE) image of the region; wherein the BSE image and the SE image are generated by scanning of the region with an electron beam; processing the BSE image and the SE image to provide a processed BSE image and a processed SE image...