ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,511,720, issued on Dec. 30, was assigned to Applied Materials Israel Ltd. (Rehovot, Israel).

"Image denoising for examination of a semiconductor specimen" was invented by Tamir Einy (Rehovot, Israel), Dror Alumot (Tel Aviv, Israel), Yarden Zohar (Holon, Israel) and Anna Levant (Rehovot, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided an image generation system and method. The method comprises obtaining a runtime image of a semiconductor specimen with a low Signal-to-noise ratio (SNR), and processing the runtime image using a machine learning (ML) model to obtain an output image with a high SNR. The ML model is previously trained ...