US Patent Issued to Applied Materials Israel on Dec. 16 for "Defect offset correction for examination of semiconductor specimens" (Taiwanese, Israeli Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,498,333, issued on Dec. 16, was assigned to Applied Materials Israel Ltd. (Rehovot, Israel).

"Defect offset correction for examination of semiconductor specimens" was invented by Albert Kao (Taipei, Taiwan), Shih-Wei Yang (Hsinchu, Taiwan), Chun-Hsiang Yen (Hsinchu, Taiwan), Boaz Cohen (Lehavim, Israel), Yen Cheng Chiang (Hukou Township, Hsinchu County, Taiwan), Ching-Hung Lai (Hsinchu, Taiwan) and Chenwei Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a system and method of examination of a semiconductor specimen. The method includes obtaining a group of defect candidates associated with respective inspection lo...