US Patent Issued to AP MEMORY TECHNOLOGY on Dec. 16 for "Memory device having segmented data line structure" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,931, issued on Dec. 16, was assigned to AP MEMORY TECHNOLOGY Corp. (Hsinchu County, Taiwan).

"Memory device having segmented data line structure" was invented by Wen-Liang Chen (Hsinchu County, Taiwan) and Lin Ma (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of sets of bitlines, a set of data lines and a column selection circuit. Each data line is segmented into line segments separated from each other. A first data line includes a first line segment and a second line segment adjacent to each other. A second data line includes a first line segment. The column selection circuit is configured to se...