US Patent Issued to AP Memory Technology, AP Memory Technology (Hangzhou) on May 27 for "Capacitor device and manufacturing method therefor" (Japanese, Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,521, issued on May 27, was assigned to AP Memory Technology Corp. (Zhubei, Taiwan) and AP Memory Technology (Hangzhou) Ltd. Co. (Hangzhou, China).

"Capacitor device and manufacturing method therefor" was invented by Masaru Haraguchi (Tokyo), Yoshitaka Fujiishi (Tokyo) and Wenliang Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor device includes: a substrate; an insulation film, disposed on the substrate; at least one capacitor unit cell, being covered by the insulation film on the substrate, the at least one capacitor unit cell having at least one first electrode and at least one second electrode disposed over the firs...