US Patent Issued to ANJI MICROELCTRONICS (SHANGHAI) on July 22 for "Chemical mechanical polishing solution" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,365,814, issued on July 22, was assigned to ANJI MICROELCTRONICS (SHANGHAI) Co. LTD (Shanghai).

"Chemical mechanical polishing solution" was invented by Shoutian Li (Shanghai), Xiaoming Ren (Shanghai) and Changzheng Jia (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid."

The patent was filed on Dec. 3, 2020, under Application No. 17/784,094.

*For further information, including images...