US Patent Issued to Anhui University on Oct. 21 for "Broadband infrared absorber based on epsilon-near-zero material" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,449,577, issued on Oct. 21, was assigned to Anhui University (Anhui, China).

"Broadband infrared absorber based on epsilon-near-zero material" was invented by Ming Fang (Hefei, China), Chenran Liu (Hefei, China), Meijun Kang (Hefei, China), Ke Xu (Hefei, China), Jian Feng (Hefei, China), Zhicheng Xiao (Hefei, China), Rongsheng Cheng (Hefei, China), Xingchen Liu (Hefei, China) and Zhixiang Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described is a broadband near infrared absorber, including a wide-type cross-shaped gold layer, an indium tin oxide (ITO) thin film, a silicon dioxide (SiO2) layer and a hollowed-out cross-shaped gold l...