US Patent Issued to Anhui Cambricon Information Technology on May 6 for "Capacitor structure and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,149, issued on May 6, was assigned to Anhui Cambricon Information Technology Co. Ltd. (Anhui, China).

"Capacitor structure and method for forming the same" was invented by Shuai Chen (Anhui, China), Zhiwei Qiu (Anhui, China) and Junwei Zhang (Anhui, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method according to an embodiment is for forming a capacitor structure on a wafer. A first capacitor is formed on a first side of a wafer, and a second capacitor is formed on a second side of the wafer. The capacitor structure includes the first capacitor and the second capacitor. A trench capacitor is fabricated at both ends of an interposer, which ...