US Patent Issued to Analog Devices on March 25 for "FinFET thyristors with embedded transistor control for protecting high-speed communication systems" (Massachusetts, North Carolina Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,593, issued on March 25, was assigned to Analog Devices Inc. (Norwood, Mass.).

"FinFET thyristors with embedded transistor control for protecting high-speed communication systems" was invented by Javier A. Salcedo (North Billerica, Mass.) and Jonathan G. Pfeifer (Summerfield, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth ope...