US Patent Issued to Analog Devices on March 11 for "Gallium nitride device for high frequency and high power applications" (Massachusetts Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,631, issued on March 11, was assigned to Analog Devices Inc. (Wilmington, Mass.).

"Gallium nitride device for high frequency and high power applications" was invented by Puneet Srivastava (Wilmington, Mass.) and James G. Fiorenza (Carlisle, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunct...