US Patent Issued to Analog Devices on July 8 for "Method of forming a sealed cavity embedded in a semiconductor wafer" (Massachusetts Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,698, issued on July 8, was assigned to Analog Devices Inc. (Wilmington, Mass.).

"Method of forming a sealed cavity embedded in a semiconductor wafer" was invented by Yingqi Jiang (Bedford, Mass.) and James G. Fiorenza (Carlisle, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are described for forming a sealed cavity within a semiconductor wafer, where a conductor wafer includes a structure, such as a T-gate electrode or passive component, formed over a substrate. The sealed-cavity structure may be embedded into the wafer without interfering with any subsequent processes. That is, once the cavity is closed, any subsequent backend proc...