US Patent Issued to Analog Devices on Dec. 9 for "Self-aligned silicide gate for discrete shielded-gate trench power MOSFET" (California Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,577, issued on Dec. 9, was assigned to Analog Devices Inc. (Wilmington, Mass.).

"Self-aligned silicide gate for discrete shielded-gate trench power MOSFET" was invented by Zhenyin Yang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods for shielded-gate trench power MOSFETs are disclosed herein. The power MOSFETs are fabricated using a self-aligned gate poly silicide to achieve low gate resistance. Accordingly, the power MOSFETs can be used in high speed applications operating with fast transistor switching speeds. Moreover, the self-aligned gate poly silicide processing can be achieved in relatively few processing...