US Patent Issued to Analog Devices International UnLtd. on May 13 for "Methods for tunnel magnetoresistance multi-turn sensor manufacture and read-out" (Irish, German Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,365, issued on May 13, was assigned to Analog Devices International UnLtd. Co. (Limerick, Ireland).

"Methods for tunnel magnetoresistance multi-turn sensor manufacture and read-out" was invented by Onur Necdet Urs (Hamburg, Germany), Jan Kubik (Limerick, Ireland), Fernando Franco (Limerick, Ireland) and Jochen Schmitt (Biedenkopf, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A tunnel magnetoresistive (TMR) multi-turn (MT) sensor can include sensing elements which can be provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below th...