ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,615, issued on Jan. 27, was assigned to ams-OSRAM International GmbH (Regensburg, Germany).
"V-pit-enhanced component having improved charge carrier distribution" was invented by Xiaojun Chen (Penang, Malaysia), Heng Wang (Eriskirch, Germany), Jong Ho Na (Regensburg, Germany) and Alvaro Gomez-Iglesias (Regensburg, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers a...