US Patent Issued to AMS on July 15 for "Method of producing a semiconductor body with a trench, semiconductor body with at least one trench and semiconductor device" (Austrian Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,230, issued on July 15, was assigned to AMS AG (Premstatten, Austria).

"Method of producing a semiconductor body with a trench, semiconductor body with at least one trench and semiconductor device" was invented by Georg Parteder (Sankt Ruprecht an der Raab, Austria) and Thomas Bodner (Seiersberg, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is proposed of producing a semiconductor body with a trench. The semiconductor body comprises a substrate. The method comprising the step of etching the trench into the substrate using an etching mask. An oxide layer is formed at least on a sidewall of the trench by oxidation of the substrate. ...