US Patent Issued to AMS on Jan. 28 for "Through-substrate via and method for manufacturing a through-substrate via" (Dutch Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,769, issued on Jan. 28, was assigned to AMS AG (Premstatten, Austria).

"Through-substrate via and method for manufacturing a through-substrate via" was invented by Georg Parteder (Einhoven, Netherlands), Jochen Kraft (Einhoven, Netherlands) and Stefan Jessenig (Einhoven, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall o...