ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,321, issued on Nov. 25, was assigned to ams International AG (Jona, Switzerland).
"CMOS compatible near-infrared sensor system" was invented by Gernot Fasching (Eindhoven, Netherlands).
According to the abstract* released by the U.S. Patent & Trademark Office: "A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky dio...