US Patent Issued to Amplification Technologies on May 13 for "High-sensitivity avalanche photodetectors" (New Jersey Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,757, issued on May 13, was assigned to Amplification Technologies Corp. (Linden, N.J.).

"High-sensitivity avalanche photodetectors" was invented by Rafael Ben-Michael (Scotch Plains, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are avalanche photodiodes (APDs) particularly useful for high-sensitivity Geiger-mode APDs formed using an array of micro-cells. The photodetector is formed on a semiconductor substrate of indium phosphide (InP) having epitaxial layers, including indium gallium arsenide (InGaAs) as the photodetecting layer, with n-doped InP to one side, and layers of InP incorporating p-doped regions on the opposite si...