ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,205, issued on June 17, was assigned to Amorphyx Inc. (Corvallis, Ore.).
"Amorphous metal thin film transistors" was invented by Sean William Muir (Corvallis, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described."
T...