ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,809, issued on Aug. 12, was assigned to Ambature Inc. (Scottsdale, Ariz.).
"Josephson junction using molecular beam epitaxy" was invented by Michael S. Lebby (Apache Junction, Ariz.) and Davis H. Hartmann (Scottsdale, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers...