ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,065, issued on Sept. 16, was assigned to Alpha Power Solutions Ltd. (China).

"Schottky device and method of manufacturing the same" was invented by Wing Chong Tony Chau (Hong Kong), Wing Kit Cheung (Hong Kong) and Wai Tien Chan (Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is forme...