ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,424, issued on July 29, was assigned to Allos Semiconductors GmbH (Dresden, Germany).

"Nitride semiconductor component and process for its production" was invented by Armin Dadgar (Berlin) and Alois Krost (Berlin).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a mas...