US Patent Issued to Allegro MicroSystems on Nov. 25 for "Flash memory cell structure having separate program and erase electron paths" (Florida, Massachusetts, Texas Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,258, issued on Nov. 25, was assigned to Allegro MicroSystems LLC (Manchester, N.H.).

"Flash memory cell structure having separate program and erase electron paths" was invented by Thomas S. Chung (Kissimmee, Fla.), Maxim Klebanov (Palm Coast, Fla.), Sundar Chetlur (Frisco, Texas) and James McClay (Dudley, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect, a flash memory cell includes a well having a first-type dopant, a source having a second-type dopant and formed within the well, a drain having the second-type dopant and formed within the well, a floating gate above the well, a control gate above the floating gate, an oxide compou...