US Patent Issued to Allegro MicroSystems on July 15 for "Magnetoresistive element and magnetic sensor device having a high sensitivity and low zero-field offset-shift" (American, French Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,360,183, issued on July 15, was assigned to Allegro MicroSystems LLC (Manchester, N.H.).

"Magnetoresistive element and magnetic sensor device having a high sensitivity and low zero-field offset-shift" was invented by Jeffrey Childress (San Jose, Calif.) and Andrey Timopheev (Vif, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive element has a tunnel barrier layer included between a ferromagnetic reference layer having a fixed reference magnetization and a ferromagnetic sense layer having a free sense magnetization. The sense magnetization has a ferromagnetic material composition and a stable vortex configuration in the absence of ...