ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,163, issued on July 15, was assigned to Allegro MicroSystems LLC (Manchester, N.H.).

"Fabricating an electroconductive contact on a top layer of a tunneling magnetoresistance element using two hard masks" was invented by Maxim Klebanov (Palm Coast, Fla.), Yen Ting Liu (Hsinchu, Taiwan), Sundar Chetlur (Frisco, Texas), Paolo Campiglio (Arcueil, France) and Samridh Jaiswal (London).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect, a method includes depositing magnetoresistance (MR) layers of a MR element on a semiconductor structure; depositing a first hard mask on the MR layers; depositing and patterning a first photoresist on the first ha...